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IRFBC40AS Power MOSFET

IRFBC40AS


IRFBC40AS
Part Number IRFBC40AS
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IRFBC40AS

Vishay
IRFBC40AS
Part Number IRFBC40AS
Manufacturer Vishay
Title Power MOSFET
Description IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 42 Qgs (nC) 10 Qgd (nC) 20 Configuration Single D D2PAK (TO-263) 1.2 G GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See devi.
Features
• Halogen-free According to IEC 61249-2-21 Definition
• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power .

IRFBC40AS

INCHANGE
IRFBC40AS
Part Number IRFBC40AS
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFBC40AS ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volta.
Features
·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX)
·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V I.

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