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IRFBC40A Power MOSFET

IRFBC40A


IRFBC40A
Part Number IRFBC40A
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IRFBC40A

International Rectifier
IRFBC40A
Part Number IRFBC40A
Manufacturer International Rectifier
Title Power MOSFET
Description PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Chara.
Features : l Single Transistor Forward Notes  through … are on page 8 www.irf.com 1 6/24/99 IRFBC40A V(BR)DSS Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
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  – RDS(on) Static Drain-to-Source On-Resistance
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  –
  – VGS(th) Gate Threshold Voltage 2.0
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  – IDSS Drain-to-Source Leakage Current
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  –
  – Gate-to.

IRFBC40A

INCHANGE
IRFBC40A
Part Number IRFBC40A
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFBC40A ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltag.
Features
·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX)
·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V I.

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