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IRFBC40 |
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| Part Number | IRFBC40 |
| Manufacturer | Fairchild Semiconductor |
| Description | IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, a... |
| Features |
• 6.2A, 600V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRFBC40 Rev. B IRFBC40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFBC40 600 600 6.2 3.9 25 ±20 125 1.0 570 -55 to 150 3... |
| Document |
 IRFBC40 Data Sheet
PDF 91.86KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC40 |
STMicroelectronics |
N-Channel Power MOSFET |
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| 2 | IRFBC40 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRFBC40 |
International Rectifier |
Power MOSFET |
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| 4 | IRFBC40 |
Vishay |
Power MOSFET |
|
| 5 | IRFBC40 |
Harris |
N-Channel Power MOSFETs |
|
| 6 | IRFBC40 |
INCHANGE |
N-Channel MOSFET |
|
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