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IRFBC40 |
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| Part Number | IRFBC40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various... |
| Features |
pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 600 600 ± 20 2 3.9 25 125 1.0 3 -65 to 150 150
(1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area August 1998 1/8 IRFBC40 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1... |
| Document |
 IRFBC40 Data Sheet
PDF 92.75KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC40 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 2 | IRFBC40 |
International Rectifier |
Power MOSFET |
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| 3 | IRFBC40 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 4 | IRFBC40 |
Vishay |
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| 5 | IRFBC40 |
Harris |
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| 6 | IRFBC40 |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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