IRFBC40L Datasheet. existencias, precio

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IRFBC40L Power MOSFET

IRFBC40L


IRFBC40L
Part Number IRFBC40L
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IRFBC40L

International Rectifier
IRFBC40L
Part Number IRFBC40L
Manufacturer International Rectifier
Title Power MOSFET
Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the hig.
Features rameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating.

IRFBC40L

INCHANGE
IRFBC40L
Part Number IRFBC40L
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFBC40L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltag.
Features
·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX)
·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V I.

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