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IRFP150 N-Channel MOSFET

IRFP150


IRFP150
Part Number IRFP150
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IRFP150

Vishay
IRFP150
Part Number IRFP150
Manufacturer Vishay
Title Power MOSFET
Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-2.
Features
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, l.

IRFP150

STMicroelectronics
IRFP150
Part Number IRFP150
Manufacturer STMicroelectronics
Title N-Channel MOSFET
Description IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Voss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V ROS(on) 0.055 n 0.055 n 0.055 n 0.055 n 0.08 n 0.08 n 0.08 n 0.08 n 10 40 A 26 A .
Features 151 152 150FI 151FI 152FI 153 153FI Vos * VOGR * VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 Kn) Gate-source voltage Drain current (pulsed) 100 60 100 60 100 60 100 60 ±20 160 160 140 140 150 151 152 153 10 Drain current (cont.) at Tc = 25°C 40 40 34 34 10 Drain current (cont.) at Tc= 100°C 26 26 22 22 150FI 151FI 152FI 153FI 10 - Drain curre.

IRFP150

IXYS Corporation
IRFP150
Part Number IRFP150
Manufacturer IXYS Corporation
Title (IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
Description .
Features .

IRFP150

Harris
IRFP150
Part Number IRFP150
Manufacturer Harris
Title N-Channel Power MOSFETs
Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s.
Features
• 34A and 40A, 60V and 100V
• rDS(ON) = 0.055Ω and 0.08Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRFP150 TO-247 IRFP150 IRFP151 TO.

IRFP150

Fairchild Semiconductor
IRFP150
Part Number IRFP150
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 2002 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guarante.
Features
• 40A, 100V
• rDS(ON) = 0.055Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP150 PACKAGE TO-247 BRAND IRFP150 Symbol D NOTE: When ordering, include the .

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