Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFP150N |
| Part Number | IRFP150N |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer . |
| Features | ar Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf. |
IRFP150N |
| Part Number | IRFP150N |
| Manufacturer | ARTS CHIP |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme. |
| Features | z Avalanche Process Technology z Dynamic dv/dt Rating z 175 Operating Temperature z Fast Switching z Fully Avalanche Rated Description Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr. |
IRFP150N |
| Part Number | IRFP150N |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impe. |
| Features |
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve DRAIN (TAB) • UIS Rating Curve Ordering Information Symbol D PART NUMBER IRFP150N PACKAGE TO-247 BRAND IRFP150N G S Absolute Maximum Ratings TC = 2. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP150 |
IXYS Corporation |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE |
|
| 2 | IRFP150 |
Harris |
N-Channel Power MOSFETs |
|
| 3 | IRFP150 |
STMicroelectronics |
N-Channel MOSFET |
|
| 4 | IRFP150 |
Vishay |
Power MOSFET |
|
| 5 | IRFP150 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRFP150 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRFP150A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFP150A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 9 | IRFP150FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFP150M |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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