| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IR |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IR |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IR |
|
|
|
|
Nell |
N-Channel Power MOSFET RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(230nC Max.) Low reverse transfer capacitance (C RSS = 310pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Sourc |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IR |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.077Ω @ VGS = 10V Ultra low gate charge(72nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D GDS TO-220AB (I |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.023Ω @ VGS = 10V Ultra low gate charge(130nC max.) Low reverse transfer capacitance (CRSS = 72pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature G (Gate) S (Source |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (CRSS = 230pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D (Drain) G (Gate |
|
|
|
|
Nell |
N-Channel Power MOSFET RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.077Ω @ VGS = 10V Ultra low gate charge(72nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D GDS TO-220AB (I |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF6 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF7 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF7 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF8 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IR |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF6 |
|
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF8 |
|
Desde 2024. D4U Semiconductor.
|