Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF830 |
| Part Number | IRF830 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app. |
| Features |
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is. |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | Advanced Power Electronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high cur. |
| Features | . |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | TRSYS |
| Title | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Description | . |
| Features | . |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | Comset Semiconductors |
| Title | N-Channel Enhancement Mode Power MOS Transistors |
| Description | SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching a. |
| Features | N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching applications Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 500 4.5 18 4.5 280 7.4 . |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | ON Semiconductor |
| Title | Power Field Effect Transistor |
| Description | IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds • Low RDS(on) to. |
| Features | dc Watts W/°C °C RθJC RθJA TL °C/W 1.67 62.5 300 °C http://onsemi.com TMOS POWER FET 4.5 AMPERES, 500 VOLTS RDS(on) = 1.5 Ω N−Channel D ®G S 4 12 3 TO−220AB CASE 221A STYLE 5 PIN ASSIGNMENT 1 Gate 2 Drain 3 Source 4 Drain See the MTM4N45 Data Sheet for a complete set of design curves for the product on this data sheet. Design curves of the MTP4N45 are applicable for this product. © Semico. |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | NXP |
| Title | PowerMOS transistor |
| Description | N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF830 is supplied in the SOT78 (TO220AB) co. |
| Features |
• Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, moto. |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOSFET |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-. |
| Features |
lsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 ± 20 4.5 2.9 18 100 0.8 3.5 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area (1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or . |
IRF830 |
| Part Number | IRF830 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 4.5A, 500V • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF830 PACKAGE TO-220AB BRAND IRF830 Symbol D NOTE: When ordering, include the. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 2 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 3 | IRF830 |
nELL |
N-Channel Power MOSFET |
|
| 4 | IRF8301MPbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF8301MTRPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF8302MPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF8304MPBF |
International Rectifier |
Power MOSFET |
|
| 8 | IRF8306MPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF8308MPBF |
International Rectifier |
POWER MOSFET |
|
| 10 | IRF8308MTRPbF |
International Rectifier |
POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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