Part Number | IRF830 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulator... |
Features |
dc
Watts W/°C
°C
RθJC RθJA
TL
°C/W 1.67 62.5
300 °C
http://onsemi.com
TMOS POWER FET 4.5 AMPERES, 500 VOLTS
RDS(on) = 1.5 Ω
N−Channel D
®G
S
4
12 3
TO−220AB CASE 221A
STYLE 5
PIN ASSIGNMENT 1 Gate 2 Drain 3 Source 4 Drain
See the MTM4N45 Data Sheet for a complete set of design curves for the product on this data sheet. Design curves of the MTP4N45 are applicable for this product.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
ORDERING INFORMATION
Device
Package
Shipping
IRF830
TO−220AB
50 Units/Rail
Publication Order Number: IRF830/D
IRF830
ELECTRI... |
Document |
IRF830 Data Sheet
PDF 109.97KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF830 |
NXP |
PowerMOS transistor | |
2 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
4 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF830 |
International Rectifier |
Power MOSFET |