IRF830 ON Semiconductor Power Field Effect Transistor Datasheet. existencias, precio

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IRF830

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ON Semiconductor
IRF830
IRF830 IRF830
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Part Number IRF830
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulator...
Features dc Watts W/°C °C RθJC RθJA TL °C/W 1.67 62.5 300 °C http://onsemi.com TMOS POWER FET 4.5 AMPERES, 500 VOLTS RDS(on) = 1.5 Ω N−Channel D ®G S 4 12 3 TO−220AB CASE 221A STYLE 5 PIN ASSIGNMENT 1 Gate 2 Drain 3 Source 4 Drain See the MTM4N45 Data Sheet for a complete set of design curves for the product on this data sheet. Design curves of the MTP4N45 are applicable for this product. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 ORDERING INFORMATION Device Package Shipping IRF830 TO−220AB 50 Units/Rail Publication Order Number: IRF830/D IRF830 ELECTRI...

Document Datasheet IRF830 Data Sheet
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