IRF830 |
Part Number | IRF830 |
Manufacturer | Comset Semiconductors |
Description | SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and compu... |
Features |
7 62
Unit
°C/W
1/3 09/11/2012 COMSET SEMICONDUCTORS
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
IRF830
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDSS VGS(th) IDSS
Ratings
Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance
Test Condition(s)
Min
500 2 -
Typ
3 -
Max
4 25
Unit
V V µA
ID= 250 µA, VGS= 0 V ID= 250 µA, VGS= VDS VDS= 500 V, VGS= 0 V Tj= 25 °C VDS= 500 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 2.7 A, VGS= 10 V
250 100 1.5 nA Ω
IGSS RDS(on)
... |
Document |
IRF830 Data Sheet
PDF 158.45KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF830 |
NXP |
PowerMOS transistor | |
2 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
4 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF830 |
International Rectifier |
Power MOSFET |