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IRF830 |
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| Part Number | IRF830 |
| Manufacturer | Inchange Semiconductor |
| Description | MOSFET IRF830 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A Absolute Maxi... |
| Features |
With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source
D=4.5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction temperature
Tstg Storage temperature
RATING 500 20 4.5 100 150
-65~150
UNIT V V A W
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS VGS(TH) RDS(ON)
IGSS IDSS VSD
Drain-source breakdown voltage VGS=0; ID=0.25mA
Gate threshold voltage
VDS=... |
| Document |
 IRF830 Data Sheet
PDF 31.96KB |
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Desde 2024. D4U Semiconductor.
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