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IRF830 |
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| Part Number | IRF830 |
| Manufacturer | Intersil Corporation |
| Description | IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi... |
| Features |
• 4.5A, 500V • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF830 PACKAGE TO-220AB BRAND IRF830 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-251 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. ... |
| Document |
 IRF830 Data Sheet
PDF 56.16KB |
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