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IRF3710 N-Channel MOSFET Transistor

IRF3710


IRF3710
Part Number IRF3710
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IRF3710

nELL
IRF3710
Part Number IRF3710
Manufacturer nELL
Title N-Channel Power MOSFET
Description Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extre.
Features RDS(ON) = 0.023Ω @ VGS = 10V Ultra low gate charge(130nC max.) Low reverse transfer capacitance (CRSS = 72pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 57 100 0.023 @ VGS = 10V 130 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specifi.

IRF3710

International Rectifier
IRF3710
Part Number IRF3710
Manufacturer International Rectifier
Title Power MOSFET
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.
Features C = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew.

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