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| Distributor | Stock | Price | Buy |
|---|
IRF3710Z |
| Part Number | IRF3710Z |
| Manufacturer | International Rectifier |
| Title | HEXFET Power MOSFET |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make t. |
| Features | l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fas. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3710 |
nELL |
N-Channel Power MOSFET |
|
| 2 | IRF3710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3710 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3710L |
International Rectifier |
Power MOSFET |
|
| 5 | IRF3710L |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF3710LPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF3710PbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRF3710S |
International Rectifier |
Power MOSFET |
|
| 9 | IRF3710S |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IRF3710SPBF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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