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IRF3710 |
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| Part Number | IRF3710 |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
C = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
Max. 57 40 180 200 1.3 ± 20 28 20 5.8
-55 to + 175
300 (1.6mm fro... |
| Document |
 IRF3710 Data Sheet
PDF 218.87KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3710 |
nELL |
N-Channel Power MOSFET |
|
| 2 | IRF3710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3710L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3710L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF3710LPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF3710PbF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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