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| Part Number | IRF3710 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(M... |
| Features |
·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effciency switch mode power supplies, Power factor correction and electronic lamp ballasts based on half bridge. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 57 A IDM Drain Current-Single Plused 230 A PD Total Diss... |
| Document |
 IRF3710 Data Sheet
PDF 229.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3710 |
nELL |
N-Channel Power MOSFET |
|
| 2 | IRF3710 |
International Rectifier |
Power MOSFET |
|
| 3 | IRF3710L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3710L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF3710LPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF3710PbF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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