Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF150 |
| Part Number | IRF150 |
| Manufacturer | Seme LAB |
| Title | N-CHANNEL POWER MOSFET |
| Description | IRF150 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.5. |
| Features |
• HERMETICALLY SEALED TO –3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 38A 0.055Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain . |
IRF150 |
| Part Number | IRF150 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF150 |
| Part Number | IRF150 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to . |
| Features | RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (CRSS = 230pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 42 100 0.055 @ VGS = 10V 110 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherw. |
IRF150 |
| Part Number | IRF150 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS ·Moto. |
| Features | TICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=40A; VGS=0 Ciss Input Capacitance Crss Revers. |
IRF150 |
| Part Number | IRF150 |
| Manufacturer | IXYS Corporation |
| Title | (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE |
| Description | . |
| Features | . |
IRF150 |
| Part Number | IRF150 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF150 Data Sheet March 1999 File Number 1824.3 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 40A, 100V • rDS(ON) = 0.055Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF150 PACKAGE TO-204AE BRAND IRF150 Symbol D NOTE: When ordering, include the . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1503 |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 2 | IRF1503 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1503LPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1503PBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 5 | IRF1503S |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF1503SPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF150MPBF |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF150P220 |
Infineon |
MOSFET |
|
| 9 | IRF150P221 |
Infineon |
MOSFET |
|
| 10 | IRF150SMD |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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