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IRF150 |
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| Part Number | IRF150 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for... |
| Features |
TICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS=0
VSD
Diode Forward Voltage
IS=40A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V; RGS=50Ω; ID=20A; VDD=75V; R... |
| Document |
 IRF150 Data Sheet
PDF 231.20KB |
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Desde 2024. D4U Semiconductor.
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