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IRF540A N-Channel Power MOSFET

IRF540A


IRF540A
Part Number IRF540A
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IRF540A

INCHANGE
IRF540A
Part Number IRF540A
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540A FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applic.
Features
·Static drain-source on-resistance: RDS(on) ≤52mΩ
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Volt.

IRF540A

Fairchild Semiconductor
IRF540A
Part Number IRF540A
Manufacturer Fairchild Semiconductor
Title Advanced Power MOSFET
Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRF540A BVDSS = 100 V RDS.
Features Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRF540A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/d.

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