IRF540A |
Part Number | IRF540A |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540A FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf... |
Features |
·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous@ TC=25℃ 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 110 W Tj Max. Operating Junction Temperature 175 ℃ T... |
Document |
IRF540A Data Sheet
PDF 278.44KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF540 |
Vishay |
Power MOSFET | |
2 | IRF540 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF540 |
NXP |
N-channel TrenchMOS transistor | |
4 | IRF540 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | IRF540 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF540 |
International Rectifier |
HEXFET POWER MOSFET |