IRF540A |
Part Number | IRF540A |
Manufacturer | Fairchild Semiconductor |
Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leak... |
Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.)
Ο
IRF540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 28 19.8
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain C... |
Document |
IRF540A Data Sheet
PDF 256.47KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF540 |
Vishay |
Power MOSFET | |
2 | IRF540 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF540 |
NXP |
N-channel TrenchMOS transistor | |
4 | IRF540 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | IRF540 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF540 |
International Rectifier |
HEXFET POWER MOSFET |