Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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IRF840A |
| Part Number | IRF840A |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Power MOSFET IRF840A, SiHF840A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single 0.85 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Imp. |
| Features |
• Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL S. |
IRF840A |
| Part Number | IRF840A |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM V. |
| Features | ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain. |
IRF840A |
| Part Number | IRF840A |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | PD- 91900A SMPS MOSFET IRF840A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characte. |
| Features |
l l l
Two Transistor Forward Haft Bridge Full Bridge 1
7/7/99
www.irf.com
IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – – – RDS(on) Static Drain-to-Source On-Resistance – – – VGS(th) Gate Threshold Voltage 2.0 – – – IDSS Drain-to-Source Leakage Current – – – Gate-to-Source Forward Leakage. |
IRF840A |
| Part Number | IRF840A |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi. |
| Features | RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF840A) D (Drain) G (Gate) S (Source) PRODUCT. |
IRF840A |
| Part Number | IRF840A |
| Manufacturer | TRANSYS |
| Title | Power MOSFET |
| Description | IRF840A Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Drain D Gate Drain Source N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF840 |
STMicroelectronics |
N-Channel Power MOSFET |
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| 2 | IRF840 |
Intersil Corporation |
8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET |
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| 3 | IRF840 |
International Rectifier |
N-Channel Power MOSFET |
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| 4 | IRF840 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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| 5 | IRF840 |
ART CHIP |
N-Channel Power MOSFET |
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| 6 | IRF840 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors |
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| 7 | IRF840 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 8 | IRF840 |
Vishay |
Power MOSFET |
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| 9 | IRF840 |
nELL |
N-Channel Power MOSFET |
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| 10 | IRF840 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Desde 2024. D4U Semiconductor.
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