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| Distributor | Stock | Price | Buy |
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IRF640 |
| Part Number | IRF640 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel MOSFET |
| Description | This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. TO-220 TO-220FP APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UP. |
| Features |
oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 18 11 72 125 1.0 5 -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.32 5 2000 Value IRF 640F P V V V A A A W W/ C V/ns V
o o o
Un it
C C
( •) Pulse width limited by safe operating area ( 1) ISD . |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | WEITRON |
| Title | N-Channel Enhancement Mode POWER MOSFET |
| Description | N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics. |
| Features | 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance 2 SOURCE IRF640 DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB Maximum Ratings(Ta=25 C Unless Ot. |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, s. |
| Features | . |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | NXP |
| Title | N-channel TrenchMOS transistor |
| Description | N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied i. |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, mot. |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | Fairchild Semiconductor |
| Title | 200V N-Channel MOSFET |
| Description | IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo. |
| Features |
• 18A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speed • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF640 RF1S640 RF1S640SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND IRF640 RF1S640 R. |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | Comset Semiconductors |
| Title | N-Channel Enhancement Mode Power MOS Transistors |
| Description | SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and l. |
| Features | N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Co. |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | N-CHANNEL MOSFET |
| Description | TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 12 . |
| Features | ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 12 3 PIN1：G PIN 2：D PIN 3：S / hFE Classifications & Marking 。 See Marking Instructions. http://www.fsbrec.com 1/6 IRF640 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ra. |
IRF640 |
| Part Number | IRF640 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extrem. |
| Features | RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF640A |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
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| 2 | IRF640A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 3 | IRF640A |
nELL |
N-Channel Power MOSFET |
|
| 4 | IRF640B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | IRF640FI |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 6 | IRF640FP |
STMicroelectronics |
N-Channel MOSFET |
|
| 7 | IRF640L |
International Rectifier |
Power MOSFET |
|
| 8 | IRF640L |
Vishay |
Power MOSFET |
|
| 9 | IRF640N |
International Rectifier |
Power MOSFET |
|
| 10 | IRF640N |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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