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IRF640 |
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| Part Number | IRF640 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various ... |
| Features |
oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 18 11 72 125 1.0 5 -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.32 5 2000 Value IRF 640F P V V V A A A W W/ C V/ns V
o o o
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( •) Pulse width limited by safe operating area ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet (**) Limited only by Maximum Temperature Allowed Octobe... |
| Document |
 IRF640 Data Sheet
PDF 312.82KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF640 |
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Desde 2024. D4U Semiconductor.
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