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IRF640 |
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| Part Number | IRF640 |
| Manufacturer | WEITRON |
| Description | N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated ... |
| Features |
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <0.18 Ω@V GS =10V
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
2 SOURCE
IRF640
DRAIN CURRENT 18 AMPERES
DRAIN SOURCE VOLTAGE 200 VOLTAGE
1 2 3
1. GATE 2. DRAIN 3. SOURCE
TO-220AB
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C) Pulsed Drain Current
Total Power Dissipation(TC=25˚C) Thermal Res... |
| Document |
 IRF640 Data Sheet
PDF 817.55KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF640 |
NXP |
N-channel TrenchMOS transistor |
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| 2 | IRF640 |
STMicroelectronics |
N-Channel MOSFET |
|
| 3 | IRF640 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF640 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | IRF640 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 6 | IRF640 |
Vishay |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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