IRF640 |
Part Number | IRF640 |
Manufacturer | Comset Semiconductors |
Description | SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay driver... |
Features |
Resistance, junction-ambient
Value
1 62.5
Unit
°C/W
1/3 09/11/2012 COMSET SEMICONDUCTORS
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
IRF640
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDSS VGS(th) IDSS
Ratings
Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance
Test Condition(s)
Min
200 2 -
Typ
3 0.15
Max
4 25
Unit
V V µA
ID= 250 µA, VGS= 0 V ID= 250 µA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 10 A, VG... |
Document |
IRF640 Data Sheet
PDF 156.04KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF640 |
NXP |
N-channel TrenchMOS transistor | |
2 | IRF640 |
STMicroelectronics |
N-Channel MOSFET | |
3 | IRF640 |
International Rectifier |
Power MOSFET | |
4 | IRF640 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | IRF640 |
Vishay |
Power MOSFET | |
6 | IRF640 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |