Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF730A |
| Part Number | IRF730A |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Power MOSFET IRF730A, SiHF730A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration Single 1.0 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge . |
| Features |
• Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMP. |
IRF730A |
| Part Number | IRF730A |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi. |
| Features | RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF730A) D (Drain) G (Gate) S (Source) PRODUCT . |
IRF730A |
| Part Number | IRF730A |
| Manufacturer | International Rectifier |
| Title | SMPS MOSFET |
| Description | PD - 91902A SMPS MOSFET IRF730A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple www.DataSheet4U.com Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedne. |
| Features |
SMPS Topologies:
l l
Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). 1
5/8/00
www.irf.com
IRF730A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 400 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – – – RDS(on) Static Drain-to-Source On-Resistance – – – VGS(th) Gate Threshold Voltage 2.0 – – – I. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF730 |
NXP |
PowerMOS transistor |
|
| 2 | IRF730 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | IRF730 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 4 | IRF730 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRF730 |
NTE |
N-Channel MOSFET |
|
| 6 | IRF730 |
Vishay |
Power MOSFET |
|
| 7 | IRF730 |
nELL |
N-Channel Power MOSFET |
|
| 8 | IRF730 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF730 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 10 | IRF7301 |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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