| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance pleas |
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Vishay |
Power MOSFET • Extremely Low RDS(on) • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • Excellent Temperature Stability • Parts Per Million Quality • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The technology has expande |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Thi |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • P-channel • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance pl |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see ww |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Thi |
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Vishay |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche R |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge |
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Vishay |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/E |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combina |
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Vishay |
Power MOSFET • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available • Sink to lead creepage distance = 4.8 mm Available • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of complian |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling Available • Material categorization: for definitions of compliance please see www.vish |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Ultra low on-resistance Available • Very low thermal resistance • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions |
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Vishay |
Power MOSFET 200 0.18 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vish |
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Vishay |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please |
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Vishay |
Power MOSFET • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance p |
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Desde 2024. D4U Semiconductor.
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