Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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IRFP250 |
| Part Number | IRFP250 |
| Manufacturer | ST Microelectronics |
| Title | N-CHANNEL MOSFET |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED . |
| Features |
(pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 33 20 132 180 1.44 5 –65 to 150 150 (1)ISD ≤33A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C ( •)Pulse width limited by safe operating area Sep 2000 1/8 IRFP250 THERMAL DATA Rthj-case Rthj-amb Rt. |
IRFP250 |
| Part Number | IRFP250 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications where higher power levels preclude th. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For. |
IRFP250 |
| Part Number | IRFP250 |
| Manufacturer | Fairchild |
| Title | N-Channel Power MOSFET |
| Description | Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.. |
| Features |
• 33A, 200V • rDS(ON) = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) ©2002 Fairchild Semiconductor Corpo. |
IRFP250 |
| Part Number | IRFP250 |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C . |
| Features | l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA V DS = V, GS I D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = . |
IRFP250 |
| Part Number | IRFP250 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP250A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 2 | IRFP250A |
Fairchild |
Advanced Power MOSFET |
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| 3 | IRFP250B |
Fairchild |
200V N-Channel MOSFET |
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| 4 | IRFP250M |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFP250MPbF |
Infineon |
MOSFET |
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| 6 | IRFP250MPBF |
International Rectifier |
Power MOSFET |
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| 7 | IRFP250N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFP250N |
IRF |
Power MOSFET |
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| 9 | IRFP250NPBF |
IRF |
Power MOSFET |
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| 10 | IRFP250NPBF |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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