Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFR110 |
| Part Number | IRFR110 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFETs |
| Description | IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operati. |
| Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFU110 IRFR110 PACKAGE TO-251AA TO-252AA BRAND IF. |
IRFR110 |
| Part Number | IRFR110 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRFR110 |
| Part Number | IRFR110 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFETs |
| Description | Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advan. |
| Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR110A |
Samsung |
Power MOSFET |
|
| 2 | IRFR1010Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 3 | IRFR1010Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFR1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 5 | IRFR1018E |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFR1018EPbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRFR120 |
International Rectifier |
POWER MOSFET |
|
| 8 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs |
|
| 9 | IRFR120 |
Vishay Siliconix |
Power MOSFET |
|
| 10 | IRFR1205 |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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