Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFZ34L |
| Part Number | IRFZ34L |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer . |
| Features | application. The through-hole version (IRFZ34L) is available for lowprofile applications. S D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-S. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ34 |
Fairchild Semiconductor |
Power MOSFET |
|
| 2 | IRFZ34 |
Samsung Electronics |
N-Channel Power MOSFET |
|
| 3 | IRFZ34 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFZ34 |
Vishay |
Power MOSFET |
|
| 5 | IRFZ34A |
Fairchild Semiconductor |
Power MOSFET |
|
| 6 | IRFZ34A |
Samsung Electronics |
Power MOSFET |
|
| 7 | IRFZ34E |
International Rectifier |
Power MOSFET |
|
| 8 | IRFZ34EPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFZ34N |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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