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Toshiba Semiconductor |
Silicon N-Channel IGBT ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook |
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Toshiba Semiconductor |
silicon N-channel IGBT (diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) Gate Emitter TOSHIBA GT50J327 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2005- |
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Toshiba Semiconductor |
silicon N-channel IGBT put capacitance Rise time Switching time Turn-on time Fall time Forward voltage Turn-off time Reverse recovery time Thermal resistance (IGBT) Thermal resistance (FRD) Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr VGE = ±25 V, |
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Toshiba Semiconductor |
silicon N-channel IGBT ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaut |
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Toshiba Semiconductor |
Silicon N-Channel IGBT e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t |
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Toshiba Semiconductor |
silicon N-channel IGBT r cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VC |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel IGBT ES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 12 V (pulsed) VCE = 10 V, VGE = 0, f = 1 MHz 51 W 2.3 9 12 V 0 VIN: tr < = 100 ns tf < = 100 ns Duty c |
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Toshiba Semiconductor |
silicon N-channel IGBT olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and est |
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Toshiba Semiconductor |
silicon N-channel IGBT if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/D |
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Toshiba Semiconductor |
Silicon N-Channel IGBT perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel IGBT 17 GT5G131 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimate |
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Toshiba Semiconductor |
silicon N-channel IGBT ⎯ ⎯ 2.5 4000 0.23 0.33 0.25 0.70 1.1 0.8 ⎯ ⎯ ±500 1.0 6.0 2.9 ⎯ nA mA V V pF IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth(j-c) Rth(j-c) ゲート･エミッタしゃ コレクタ･エミッタ スイッチング ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.33 µs ターンオン ターンオフ ダ イ オ |
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Toshiba Semiconductor |
silicon N-channel IGBT e operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Deratin |
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Toshiba Semiconductor |
silicon N-channel IGBT (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low s |
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Desde 2024. D4U Semiconductor.
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