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GT50J122 |
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| Part Number | GT50J122 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (I... |
| Features |
e operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance Symbol Rth (j-c) Max 0.80 Unit °C/W
Marking
TOSHIBA
GT50J122
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
... |
| Document |
 GT50J122 Data Sheet
PDF 155.17KB |
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