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GT5G131 |
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| Part Number | GT5G131 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compa... |
| Features |
17
GT5G131
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 3 V VCE = 10 V, VGE = 0, f = 1 MHz 3V 0 2.3 Ω 30 Ω Min 0.5 Typ. 2.2 2800 1.3 1.4 1.5 1.8 Max ±10 10 1.0 7.0 Unit µA µA V V pF
... |
| Document |
 GT5G131 Data Sheet
PDF 289.56KB |
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