Busque con el número de pieza junto con el fabricante o la descripción
GT50N322A |
Click to view a larger image
| Part Number | GT50N322A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • • • • FRD included between emitter and co... |
| Features |
ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
TOSHIBA Gate
50N322A
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Emitter
1
2008-01-11
GT5... |
| Document |
 GT50N322A Data Sheet
PDF 138.32KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50N321 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 2 | GT50N324 |
Toshiba |
silicon N-channel IGBT |
|
| 3 | GT50NR21 |
Toshiba |
Silicon N-Channel IGBT |
|
| 4 | GT50G102 |
ETC |
Insulated Gate Bipolar Transistor |
|
| 5 | GT50G321 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 6 | GT50J101 |
Toshiba |
TRANSISTOR IGBT |
|
Desde 2024. D4U Semiconductor.
|