Power MOSFET IRF Hoja de datos

No.	parte #	Fabricante	Descripción
1	IRF3205	Thinki Semiconductor	N-Channel Trench Process Power MOSFET Transistor ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schemat
2	IRFP260N	International Rectifier	Power MOSFET 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Curre
3	IRF840	Advanced Power Electronics	N-CHANNEL ENHANCEMENT MODE POWER MOSFET rage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.0 62 Unit ℃/W ℃/W 200430071-1
4	IRFZ44N	International Rectifier	Power MOSFET ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering
5	IRFP460	International Rectifier	Power MOSFET
6	IRF1010	nELL	N-Channel Power MOSFET RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1
7	IRF540N	Fairchild Semiconductor	Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS R
8	IRF1010E	International Rectifier	Power MOSFET uous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Solderin
9	IRF840	International Rectifier	N-Channel Power MOSFET
10	IRFU1N60APBF	International Rectifier	HEXFET Power MOSFET ingle Transistor Flyback Notes through are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source
11	IRF1404	International Rectifier	Power MOSFET S @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Jun
12	IRF540N	International Rectifier	Power MOSFET rent, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 1
13	IRF840	ART CHIP	N-Channel Power MOSFET se R ӨJA Thermal Resistance, Junction to Ambient PD Total Power Dissipation at Tc=25¥ Notes Rating IRF440/442 IRF840/842 MTM7N50 500 500 ±20 -50 to +150 275 IRF440/441 IRF840/841 0.85 8 32 1.0 60 125 IRF442/443 IRF842/843 1.1 7 28 1.0 60 125
14	IRF520	Fairchild Semiconductor	N-Channel Power MOSFET • 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur
15	IRF640N	International Rectifier	Power MOSFET t possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole
16	IRF540NS	International Rectifier	Power MOSFET e applications. G Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
17	IRF3205	International Rectifier	Power MOSFET ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering
18	IRF9540N	International Rectifier	Power MOSFET NE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" No
19	IRFZ44NSPBF	International Rectifier	Power MOSFET IRFZ44NL) is available for low- profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
20	AUIRFZ44N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip