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IRF3205 |
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| Part Number | IRF3205 |
| Manufacturer | Thinki Semiconductor |
| Description | The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=... |
| Features |
● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery ... |
| Document |
 IRF3205 Data Sheet
PDF 897.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF320 |
Samsung semiconductor |
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| 2 | IRF320 |
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| 3 | IRF320 |
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| 4 | IRF320 |
Inchange Semiconductor |
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| 5 | IRF320 |
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| 6 | IRF3205 |
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| 7 | IRF3205 |
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| 8 | IRF3205 |
nELL |
N-Channel Power MOSFET |
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| 9 | IRF3205A |
nELL |
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| 10 | IRF3205H |
nELL |
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Desde 2024. D4U Semiconductor.
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