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IRFZ44NSPBF |
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| Part Number | IRFZ44NSPBF |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
VGS IAR EAR dv/dt
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Amb... |
| Document |
 IRFZ44NSPBF Data Sheet
PDF 324.05KB |
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Desde 2024. D4U Semiconductor.
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