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IRFZ44NSPBF |
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| Part Number | IRFZ44NSPBF |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us. |
| Features | IRFZ44NL) is available for low- profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS IAR EAR dv/dt Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Amb. |
| Datasheet |
 IRFZ44NSPBF Data Sheet
PDF 324.05KB |
| Distributor | Stock | Price | Buy |
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IRFZ44NSPBF |
| Part Number | IRFZ44NSPBF |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | IRFZ44NSPBF-VB IRFZ44NSPBF-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 60 V 11 mΩ 12 mΩ 75 A Single D2PAK (TO-263) FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET D G D S G S N-Cha. |
| Features |
• 175 °C Junction Temperature • TrenchFET® Power MOSFET D G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 75 50a Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Curre. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ44NS |
NXP |
N-Channel MOSFET |
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| 2 | IRFZ44NS |
International Rectifier |
Power MOSFET |
|
| 3 | IRFZ44NS |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFZ44N |
International Rectifier |
Power MOSFET |
|
| 5 | IRFZ44N |
NXP |
N-Channel MOSFET |
|
| 6 | IRFZ44N |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 7 | IRFZ44NL |
International Rectifier |
Power MOSFET |
|
| 8 | IRFZ44NLPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRFZ44NPBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRFZ44 |
International Rectifier |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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