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IRFZ44 |
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| Part Number | IRFZ44 |
| Manufacturer | Thinki Semiconductor |
| Description | The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=60V；ID=45A@ VGS=10V； RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Powe. |
| Features |
● VDS=60V；ID=45A@ VGS=10V； RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDSS = 45 A RDS(ON) = 6.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD EAS TJ,TSTG. |
| Datasheet |
 IRFZ44 Data Sheet
PDF 416.93KB |
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IRFZ44 |
| Part Number | IRFZ44 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approx. |
| Features |
• Dynamic dV/dt rating • 175 °C operating temperature Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) te. |
IRFZ44 |
| Part Number | IRFZ44 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRFZ44 |
| Part Number | IRFZ44 |
| Manufacturer | Fairchild |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.020Ω (Typ.) www.DataSheet4U.c. |
| Features | ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.020Ω (Typ.) www.DataSheet4U.com IRFZ44 BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS I. |
IRFZ44 |
| Part Number | IRFZ44 |
| Manufacturer | ART CHIP |
| Title | N-CHANNEL POWER MOSFETS |
| Description | IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY P. |
| Features | Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY Part Number VDS IRFZ44 60V RDS(on) 0.028Ω ID 35A IRFZ45 60V 0.035Ω 35A IRFZ40 50V 0.028Ω 35A IRFZ42 50V 0.035Ω 35A *Current limited by. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFZ40 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
| 3 | IRFZ40 |
Motorola Semiconductor |
Power Field Effect Transistors |
|
| 4 | IRFZ40 |
STMicroelectronics |
N-Channel Power MOS Transistors |
|
| 5 | IRFZ40 |
Vishay |
Power MOSFET |
|
| 6 | IRFZ40 |
ART CHIP |
N-CHANNEL POWER MOSFETS |
|
| 7 | IRFZ40FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 8 | IRFZ40FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRFZ42 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 10 | IRFZ42 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
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