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IRFZ40 |
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| Part Number | IRFZ40 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cos. |
| Features |
• Dynamic dV/dt rating • 175 °C operating temperature Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combina. |
| Datasheet |
 IRFZ40 Data Sheet
PDF 766.28KB |
| Distributor | Stock | Price | Buy |
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IRFZ40 |
| Part Number | IRFZ40 |
| Manufacturer | Motorola Semiconductor |
| Title | Power Field Effect Transistors |
| Description | . |
| Features | . |
IRFZ40 |
| Part Number | IRFZ40 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOS Transistors |
| Description | T SGS-THOMSON ^ 7 #« [^DWi[L[i(gTOR!]D(gi IRFZ40 IRFZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ42 V Dss 50 V 50 V ^DS(on) 0.028 fi 0.035 n •d 35 A 35 A • VERY LOW Rds (on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO INDUSTRIAL APPLICATIONS. |
| Features |
t.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped (L= 100 *iH) Total dissipation at Tc < 25°C Derating factor
Ttg
Storage temperature
Ti
Max. operating junction temperature
• Tl = 2 5 °C to 125°C (*) Repetitive Rating: Pulse width limited by max junction temperature June 1988 IRFZ40 IRFZ42 50 V 50 V ±20 V 35 35 A 32 29 A 160 145 A 160 145 A 125 W. |
IRFZ40 |
| Part Number | IRFZ40 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Op. |
| Features |
·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Current Capability DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total . |
IRFZ40 |
| Part Number | IRFZ40 |
| Manufacturer | Samsung Electronics |
| Title | N-Channel Power MOSFETS |
| Description | . |
| Features | . |
IRFZ40 |
| Part Number | IRFZ40 |
| Manufacturer | ART CHIP |
| Title | N-CHANNEL POWER MOSFETS |
| Description | IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY P. |
| Features | Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY Part Number VDS IRFZ44 60V RDS(on) 0.028Ω ID 35A IRFZ45 60V 0.035Ω 35A IRFZ40 50V 0.028Ω 35A IRFZ42 50V 0.035Ω 35A *Current limited by. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ40FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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| 2 | IRFZ40FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRFZ42 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 4 | IRFZ42 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
| 5 | IRFZ42 |
Motorola Semiconductor |
Power Field Effect Transistors |
|
| 6 | IRFZ42 |
ART CHIP |
N-CHANNEL POWER MOSFETS |
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| 7 | IRFZ44 |
International Rectifier |
Power MOSFET |
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| 8 | IRFZ44 |
Fairchild |
Power MOSFET |
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| 9 | IRFZ44 |
Vishay |
Power MOSFET |
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| 10 | IRFZ44 |
Thinki Semiconductor |
N-Channel Trench Power MOSFETs |
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Desde 2024. D4U Semiconductor.
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