IRFZ40 |
Part Number | IRFZ40 |
Manufacturer | ART CHIP |
Description | IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operatin... |
Features |
Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
TO-220
IRFZ44/IRFZ45 IRFZ40/IRFZ42
PRODUCT SUMMARY
Part Number VDS
IRFZ44
60V
RDS(on) 0.028Ω
ID 35A
IRFZ45
60V
0.035Ω
35A
IRFZ40
50V
0.028Ω
35A
IRFZ42
50V
0.035Ω
35A
*Current limited by wire & pin diameter
MAXIMUM RATINGS
Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1 0MΩ) (1) Gate-Source Voltage Continuous Drain Current Tc=25¥ Continuous Drain Current Tc=100¥ D... |
Document |
IRFZ40 Data Sheet
PDF 838.20KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFZ40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFZ40 |
Samsung Electronics |
N-Channel Power MOSFETS | |
3 | IRFZ40 |
Motorola Semiconductor |
Power Field Effect Transistors | |
4 | IRFZ40 |
STMicroelectronics |
N-Channel Power MOS Transistors | |
5 | IRFZ40 |
Vishay |
Power MOSFET | |
6 | IRFZ40FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
7 | IRFZ40FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFZ42 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistors | |
9 | IRFZ42 |
Samsung Electronics |
N-Channel Power MOSFETS | |
10 | IRFZ42 |
Motorola Semiconductor |
Power Field Effect Transistors |