IRFZ44N |
Part Number | IRFZ44N |
Manufacturer | International Rectifier |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
PD - 94787B
IRFZ44NPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 17.5mΩ
ID = 49A
S
TO-220AB
Max. 49 35 160 94 0.63 ± 20 25 9.4 5.0
-55 to + 175
300 (1... |
Document |
IRFZ44N Data Sheet
PDF 226.34KB |
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