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IRFP260N International Rectifier Power MOSFET Datasheet

IRFP260NPBF MOSFET N-CH 200V 50A TO247AC


International Rectifier
IRFP260N
Part Number IRFP260N
Manufacturer International Rectifier
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer w...
Features 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max. 50 35 200 300 2.0 ±20 560 50 30...

Document Datasheet IRFP260N datasheet pdf (189.46KB)
Distributor Distributor
DigiKey
Stock 13180 In Stock
Price
5000 units: 1.88825 USD
2000 units: 1.96816 USD
1000 units: 2.09022 USD
500 units: 2.44112 USD
100 units: 2.7463 USD
25 units: 3.204 USD
1 units: 4.04 USD
BuyNow BuyNow BuyNow (Manufacturer a Infineon Technologies AG)




IRFP260N Distributor

Infineon Technologies AG
IRFP260NPBF
MOSFET, N, 200V, 49A, TO-247AC
1000 units: 2908 KRW
500 units: 3379 KRW
100 units: 3850 KRW
10 units: 4321 KRW
1 units: 5546 KRW
Distributor
element14 Asia-Pacific

9112 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRFP260NPBF
MOSFET N-CH 200V 50A TO247AC
5000 units: 1.88825 USD
2000 units: 1.96816 USD
1000 units: 2.09022 USD
500 units: 2.44112 USD
100 units: 2.7463 USD
25 units: 3.204 USD
1 units: 4.04 USD
Distributor
DigiKey

13180 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRFP260NPBF
MOSFETs MOSFT 200V 49A 40mOhm 156nCAC
1 units: 4.04 USD
10 units: 4.02 USD
25 units: 3.08 USD
100 units: 2.66 USD
400 units: 2.02 USD
1200 units: 1.92 USD
2800 units: 1.84 USD
Distributor
Mouser Electronics

5694 In Stock
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Infineon Technologies AG
IRFP260NPBF
MOSFET N-Channel 200V 50A TO247AC, TU
100 units: 25.266 HKD
50 units: 25.841 HKD
25 units: 26.415 HKD
Distributor
RS

20 In Stock
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Infineon Technologies AG
IRFP260NPBF
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube
100 units: 1.875 USD
50 units: 1.925 USD
11 units: 3.075 USD
Distributor
Verical

698 In Stock
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Infineon Technologies AG
IRFP260NPBF
IRFP260 - 12V-300V N-Channel Power MOSFET
1000 units: 1.87 USD
500 units: 1.98 USD
100 units: 2.07 USD
25 units: 2.16 USD
1 units: 2.2 USD
Distributor
Rochester Electronics

6 In Stock
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International Rectifier
IRFP260N
MOSFET Transistor, N-Channel, TO-247AC
16 units: 4.64 USD
5 units: 5.104 USD
1 units: 6.96 USD
Distributor
Quest Components

17 In Stock
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Infineon Technologies AG
IRFP260NPBF
Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
100 units: 1.67 USD
25 units: 1.95 USD
5 units: 2.24 USD
1 units: 2.5 USD
Distributor
TME

0 In Stock
No Longer Stocked
Infineon Technologies AG
IRFP260NPBF
MOSFET IRFP260N TO-247AC N-Channel 200V 50A
1 units: 2.95 USD
10 units: 2.59 USD
100 units: 2.29 USD
Distributor
Jameco Electronics

58 In Stock
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Infineon Technologies AG
IRFP260NPBF
N-CH 200V 49A 40mOhm TO247
25 units: 1.21 USD
75 units: 1.13 USD
125 units: 1.0675 USD
275 units: 0.9642 USD
400 units: 0.9298 USD
Distributor
Rutronik

450 In Stock
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IRFP260N Similar Datasheet

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www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V/ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C D (TAB) 28 5 280 -55 ... +150 150 -55 ... +150 G = Gate, S = Source, D = Drain, TAB = Drain ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, IS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Features • International standard package JEDEC ...
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