Part Number | IRF540N |
Manufacturer | International Rectifier |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
rent, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
PD - 94812
IRF540NPbF
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 44mΩ
ID = 33A
S
TO-220AB
Max. 33 23 110 130 0.87 ± 20 16 13 7.0
-55 to + 175
300 (1.6mm from case ) 10 l... |
Document |
IRF540N Data Sheet
PDF 153.42KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF540 |
Vishay |
Power MOSFET | |
2 | IRF540 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF540 |
NXP |
N-channel TrenchMOS transistor | |
4 | IRF540 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | IRF540 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF540 |
International Rectifier |
HEXFET POWER MOSFET |