logo

IRF9540N International Rectifier Power MOSFET Datasheet

IRF9540NSTRRPBF MOSFET P-CH 100V 23A D2PAK


International Rectifier
IRF9540N
Part Number IRF9540N
Manufacturer International Rectifier
Description • Lead-Free PD - 94790A IRF9540NPbF www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in m...
Features NE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) ...

Document Datasheet IRF9540N datasheet pdf (927.26KB)
Distributor Distributor
DigiKey
Stock 5 In Stock
Price
1 units: 1.59 USD
BuyNow BuyNow BuyNow (Manufacturer a Infineon Technologies AG)




IRF9540N Distributor

Infineon Technologies AG
IRF9540NPBF
MOSFET, P, -100V, -23A, TO-220
5000 units: 834 KRW
1000 units: 894 KRW
500 units: 953 KRW
100 units: 1189 KRW
10 units: 1530 KRW
1 units: 1923 KRW
Distributor
element14 Asia-Pacific

62063 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NSTRRPBF
MOSFET P-CH 100V 23A D2PAK
1 units: 1.59 USD
Distributor
DigiKey

5 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NPBF
MOSFETs MOSFT PCh -100V -23A 117mOhm 64.7nC
1 units: 1.34 USD
10 units: 1.05 USD
100 units: 0.802 USD
500 units: 0.679 USD
1000 units: 0.574 USD
2000 units: 0.56 USD
10000 units: 0.535 USD
Distributor
Mouser Electronics

10801 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NPBF
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube
5000 units: 0.4371 USD
2000 units: 0.4828 USD
1000 units: 0.5222 USD
500 units: 0.5845 USD
100 units: 0.6877 USD
10 units: 0.8777 USD
1 units: 1.0461 USD
Distributor
Arrow Electronics

11540 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NPBF
Power MOSFET, P-Ch, VDSS -100V, RDS(ON) 0.117Ohm, ID -23A, TO-220AB, PD 140W, VGS+/-20V | Infineon IRF9540NPBF
1 units: 1.4 USD
5 units: 1.29 USD
10 units: 1.24 USD
100 units: 1.13 USD
250 units: 1.06 USD
Distributor
RS

0 In Stock
No Longer Stocked
Infineon Technologies AG
IRF9540NPBF
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube
5 units: 0.761 USD
10 units: 0.685 USD
50 units: 0.534 USD
100 units: 0.412 USD
200 units: 0.41 USD
500 units: 0.404 USD
1000 units: 0.38 USD
2000 units: 0.359 USD
4000 units: 0.335 USD
8000 units: 0.334 USD
Distributor
Chip1Stop

13879 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NPBF
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube
77 units: 1.1111 USD
Distributor
Verical

93 In Stock
BuyNow BuyNow
Infineon Technologies AG
AUIRF9540N
AUIRF9540 - 20V-150V P-Channel Automotive MOSFET
1000 units: 0.8955 USD
500 units: 0.9482 USD
100 units: 0.9903 USD
25 units: 1.03 USD
1 units: 1.05 USD
Distributor
Rochester Electronics

100 In Stock
BuyNow BuyNow
International Rectifier
IRF9540N
MOSFET Transistor, P-Channel, TO-220AB
5 units: 0.95 USD
1 units: 1.14 USD
Distributor
Quest Components

15 In Stock
BuyNow BuyNow
Infineon Technologies AG
IRF9540NLPBF
Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
1000 units: 1.19 USD
500 units: 1.3 USD
100 units: 1.58 USD
50 units: 1.7 USD
10 units: 1.98 USD
1 units: 2.41 USD
Distributor
TME

293 In Stock
BuyNow BuyNow





IRF9540N Similar Datasheet

Part Number Description
IRF9540
manufacturer
Intersil Corporation
P-Channel Power MOSFET
IRF9540, RF1S9540SM Data Sheet July 1999 File Number 2282.6 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Features • 19A, 100V • r...
IRF9540
manufacturer
International Rectifier
Power MOSFET
...
IRF9540
manufacturer
Harris Corporation
P-Channel MOSFET
• -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conv...
IRF9540
manufacturer
Fairchild Semiconductor
P-Channel Power MOSFETs
www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Features • 19A, 100...
IRF9540
manufacturer
Vishay
Power MOSFET
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9540PbF IRF9540PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = ...
IRF9540N
manufacturer
INCHANGE
P-Channel MOSFET
·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -23 IDM Drain Current-Single Pulsed -76 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 62 UNIT ℃/W ℃/W isc website:www.i...
IRF9540NL
manufacturer
International Rectifier
Power MOSFET
l l D VDSS = -100V RDS(on) = 0.117Ω G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applic...
IRF9540NL
manufacturer
INCHANGE
P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9540NL VALUE -100 ±20 -23 140 -55~175 -55~175 UNIT V V A W ℃ ℃ M...
IRF9540NLPBF
manufacturer
International Rectifier
HEXFET POWER MOSFET
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF9540NSPbF G D TO-262 IRF9540NLPbF S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Gate Drain Max. -23 -14 -92 3.1 110 0.9 ± 20 84 -14 11 -13 -55 to + 150 300 (1.6mm from case ) Source Units A c Maximum Power Dissipation...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy