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IRF3205 |
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| Part Number | IRF3205 |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA www.irf.com
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD-94791B
IRF3205PbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0mΩ ID = 110A
S
TO-220AB
Max. 110
80 390 200 1.3 ± 20 62 20 5.0 -55 to + 175
300 (1... |
| Document |
 IRF3205 Data Sheet
PDF 215.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF320 |
Samsung semiconductor |
N-Channel Power MOSFET |
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| 2 | IRF320 |
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N-Channel Power MOSFET |
|
| 3 | IRF320 |
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N-Channel Power MOSFET |
|
| 4 | IRF320 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF320 |
Harris |
N-Channel Power MOSFETs |
|
| 6 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 7 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRF3205 |
nELL |
N-Channel Power MOSFET |
|
| 9 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|
| 10 | IRF3205H |
nELL |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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