| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
NPN Transistor V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICEX Collector Cutoff Current VCE= 1300V; VBE= -2V ICBO Collect |
|
|
|
|
INCHANGE |
NPN Transistor s registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturat |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor stor BU105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= |
|
|
|
|
INCHANGE |
NPN Transistor itter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=200V; IE= 0 IEBO Emitter Cutoff Current |
|
|
|
|
INCHANGE |
NPN Transistor 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A I |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor = 50mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 400V; IE=0 I |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; |
|
|
|
|
INCHANGE |
NPN Transistor L PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= |
|
|
|
|
INCHANGE |
NPN Transistor ER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A ICBO Collector Cutoff Current VCB= 250V; IE= 0 IC |
|
|
|
|
INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=250V; IE= 0 IEBO Emitter Cutoff |
|
|
|
|
INCHANGE |
NPN Transistor rwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A VBE(sat) Base |
|
|
|
|
INCHANGE |
NPN Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor d trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor MBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 550V; VBE= -5V hFE DC Current Gain IC= 6A; VCE= 2V fT Cur |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V hFE DC Current Gain IC= 8A; VCE= 2V fT |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors O(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) B |
|
|
|
|
INCHANGE |
NPN Transistor 0mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= |
|
|
|
|
INCHANGE |
NPN Transistor ter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=300V; IE= 0 IEBO Emitter Cutoff Current V |
|
|
|
|
INCHANGE |
NPN Transistor ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 300 V V(BR)EBO Collector-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE( |
|
Desde 2024. D4U Semiconductor.
|