BU111 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BU111

Inchange Semiconductor
BU111
BU111 BU111
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Part Number BU111
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliabl...
Features = 50mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 400V; IE=0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 1mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V BU111 MIN TYP. MAX UNIT 200 V 6 V 1.5 V 1.4 V 0.1 mA 0.1 mA 8 10 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...

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